ZXTP25140BFHQ document number: ds38587 rev. 1 - 2 1 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP25140BFHQ 140v pnp medium power transistor in sot23 description this bipolar junction transistor (bjt) is designed to meet the stringent requirements of automotive applications. features ? bv ceo > - 14 0 v ? bv e c o > - 7 v ? i c = - 1 a continuous collector current ? v ce(sat) < - 260 mv @ - 1a ? r ce(sat) = 180 m ? ? high power dissipation sot23 ? 180v forward blocking voltage ? low saturation voltage ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable ( note 4) mechanical data ? case: sot 23 ? case material: molded plastic, green molding compound ul flammability classification rating 94v - 0 ? moisture sen sitivity: level 1 per j - std - 020 ? terminals: finish C matte tin plated leads, s olderabl e pe r mil - std - 202, method 208 ? weight: 0.008 grams (approximate) applications ? dc - dc c onverters ? high side switching ordering information (note s 4 & 5 ) product compliance marking reel size (inches) tape width (mm) quantity per reel zxtp25140b fhqta automotive 026 7 8 3,000 notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen and antimony free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tot al br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information 026 = product type marking code top view sot23 device symbol top view pin - out 026 c e b 1g5
ZXTP25140BFHQ document number: ds38587 rev. 1 - 2 2 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP25140BFHQ absolute maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector - base voltage v cbo - 180 v collector - emitter voltage ( f orward b locking ) v ce x - 180 v collector - emitter voltage v ce o - 140 v emitter - collector voltage ( r everse b locking) v ec o - 7 v emitter - base voltage v ebo - 7 v continuous collector current (note 5) i c - 1 a peak pulse current i cm - 3 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (note 6 ) p d 0.73 5.84 w (note 7 ) 1.05 8.4 (note 8 ) 1.25 9.6 (note 9 ) 1.81 14.5 thermal resistance, junction to ambient (note 6 ) r ? ja 171 c/w ? ? j l 74.95 c/w ? j, t stg - 55 to + 150 c notes: 6 . for a device surface mounted on 15mm x 15mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions ; the device is measured when operating in a steady - state condition. 7 . same as note (4), except the device is surface m ounted on 25mm x 25mm with 2 oz copper . 8 . same as note (4), except the device is surface m ounted on 50mm x 50mm with 2 oz copper . 9 . same as note (6), except the device is mea sured at t<5secs . 10 . thermal resistance from junction to solder - point (at the e nd of the collector lead). esd ratings (note 1 1 ) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3 a electrostatic discharge - machine model esd mm 400 v c note s : 1 1 . refer to jedec specification jesd22 - a114 and jesd22 - a115.
ZXTP25140BFHQ document number: ds38587 rev. 1 - 2 3 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP25140BFHQ thermal characteristics and derating information 100 120 140 160 180 200 1 10 100 100m 1 10 100 1m 10m 100m 1 10 safe operating area 50mm x 50mm 2 oz copper single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 50mm x 50mm 2 oz copper 15mm x 15mm 1 oz copper derating curve temperature (c) max power dissipation (w) 25mm x 25mm 2 oz copper 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 t amb =25c 50mm x 50mm 2 oz copper transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse t amb =25c 50mm x 50mm 2 oz copper pulse power dissipation pulse width (s) maximum power (w) bv (br)cev =180v bv (br)ceo =140v failure may occur in this region t amb =25c -v ce collector-emitter voltage (v) -i c collector current (a)
ZXTP25140BFHQ document number: ds38587 rev. 1 - 2 4 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP25140BFHQ electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector - base breakdown voltage b v cbo - 180 - 20 5 - v i c = - 100 a collector - emitter breakdown voltage ( forward blocking) bv cex - 180 - 205 - v i c = - 100a r be < 1k be < 1v collector - e mitte r breakdown voltage ( base open) ( note 1 2 ) b v ceo - 14 0 - 160 - v i c = - 1 0 ma emitter - base breakdown voltage b v ebo - 7 - 8. 2 - v i e = - 10 0 a emitter - base breakdown voltage (reverse blocking) (note 12) bv ec o - 7 - 8. 5 - v i e = - 100a collector - base cutoff current i cbo - < - 1 - 50 na v cb = - 144 v - - - 20 a v cb = - 144v , t amb = + 100c collector - emitter cutoff current i c ex - - 100 na v c e = - 1 44v; r be < 1k be < 1v emitter - base cutoff current i ebo - < - 1 - 50 na v eb = - 5.6v static forward current transfer ratio (note 1 2 ) h fe 1 00 200 3 00 - i c = - 1 0 ma, v ce = - 2 v 1 0 0 190 - i c = - 0. 1a, v ce = - 2 v 20 30 - i c = - 1 a, v ce = - 2 v collector - emitter saturation voltage (note 1 2 ) v ce(sat) - - 4 0 - 5 0 mv i c = - 0. 1 a, i b = - 1 0 ma - - 110 - 1 35 i c = - 0. 1 a, i b = - 2 ma - - 90 - 1 1 0 i c = - 0.5 a, i b = - 5 0 ma - 170 - 230 i c = - 0.5 a, i b = - 25 ma - - 180 - 260 i c = - 1 a, i b = - 1 00 ma base - emitter saturation voltage (note 1 2 ) v be(sat) - - 850 - 9 5 0 m v i c = - 1 a, i b = - 1 00 ma base - emitter saturation voltage (note 1 2 ) v be(on ) - - 8 0 0 - 900 mv i c = - 1 a, v ce = - 2 v output capacitance c obo - 10 - pf v cb = - 2 0v, f = 1mhz transition frequency f t - 75 - mhz v ce = - 2 0 v, i c = - 1 0ma, f = 20 mhz turn - on time t on - 102 - ns v c c = - 20 v, i c = - 10 0ma, i b1 = i b2 = - 10ma turn - off time t of f - 854 - ns note s : 1 2 . measured under pulsed conditions. pulse width 300 s. duty cycle 2% .
ZXTP25140BFHQ document number: ds38587 rev. 1 - 2 5 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP25140BFHQ typical electrical characteristics (@ t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10m 100m 1 10m 100m 1 0.0 0.1 0.2 0.3 0.4 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 0.4 0.6 0.8 1.0 1m 10m 100m 1 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 300 350 i c /i b =100 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =2v -55c 25c 100c normalised gain - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =2v 100c 25c -55c - v be(on) (v) - i c collector current (a) typical gain (h fe )
ZXTP25140BFHQ document number: ds38587 rev. 1 - 2 6 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP25140BFHQ package outline dimensions please see ap02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/_files/datasheets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a 0 8 -- all dimensions in mm dimensions value (in mm) c 2.0 x 0.8 x1 1.35 y 0.9 y1 2.9 j k1 k l1 gauge plane 0.25 h l m all 7 a c b d g f a x y y1 c x1
ZXTP25140BFHQ document number: ds38587 rev. 1 - 2 7 of 7 www.diodes.com january 2016 ? diodes incorporated ZXTP25140BFHQ important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any lia bility arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or pro ducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpora ted does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales chann el. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall i ndemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized ap plication. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products a re specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices o r systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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